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850nm&1310nm FP and APD OTDR Module

850nm & 1310nm FP and APD OTDR module is mainly used for OTDR manufacturing, providing customized services and customized production.

Product features

MQW 850nm / 1550nm FP laser InGaAs avalanche detector Low threshold current high power Built in InGaAs detector Wide temperature operating range

Details

Abosolute Maximum ratings:

Storage Temperature:-40°C~+100°C

Operating temperature:-10°C~+50°C

Reverse voltage:2V

Soldering temperature:260/10°C/S

Optical&Eletrical Characteristics:

Center Wavelength:830nm(Min.) 850nm(Typ.) 870nm(Max.) Test Condition:850nm FP

Center Wavelength:1280nm(Min.) 1300nm(Typ.) 1320nm(Max.) Test Condition:1300nm FP

Threshold current:19mA(Typ.) 25mA(Max.) Test condition:CW,25°C 850nm

Threshold current:7mA(Typ.) 15mA(Max.) Test condition:CW,25°C 1300nm

Spectral Width:5nm(Max.)

Operating Voltage:1.1V

Rise/Fall time:0.3nS(Typ.) 0.7nS(Max.)

Monitor Current:0.4mA(Typ.)

Dimension：